=z =s * -z-= - .-- --- --a - = a-= =- = = an amp company rf mosfet power transistor, iow, 28v 500 - 1000 mhz lf281 oa features n-channel enhancement mode device dmos structure lower capacitances for broadband operation common source configuration lower noise floor applications broadband linear operation 500?tihz to 1200 mhz absolute maximum ratings at 25c f 6.22 6048 ,245 z?ss g ll4 1.40 ,045 .055 h 2.92 310 .i15 x5 j l40 1.65 ,055 ,065 k 1.96 2.46 -077 ,097 l 3.61 4.37 642 572 electrical characteristics at 25c output capacitance reverse capacitance power gain drain efficiency load mismatch tolerance c ass 10 pf v,,=28.0 v, f=l .o mhz c rss 4.8 pf v,,=26.0 v, f=l .o mhz gp 10 - db v,,=28.0 v, i,,=1 00 ma, p,,=lo.o w, f=l .o ghz q0 50 - % v,,=28.0 v, i,,,=1 00 ma, p,,=lo.o w, f=l .o ghz vswr-t - 2o:l - v,,=28.0 v, i,,=1 00 ma, p,,=lo.o w, f=l .o ghz specifica!ions subject to change without notice. 9-74 north america: tel. (800) 366-2266 d asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m/a-com, inc. n europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
rf mosfet power transistor, iow, 28v lf281 oa v2.w typical broadband performance curves capacitances vs voltage f=l .o mhz gain vs frequency 20 v,,=28 v i,,=100 ma po,,=lo w iii 500 700 1000 12w frequency (mhz) power output vs voltage f=l.oghz p,,=l.o w l,o=loo ma 5 10 15 20 25 30 36 v,, (v) efficiency vs frequency 5.5 v,,,=28 v l,o=loo ma po,,=l 0 w 1 500 750 1000 1250 1400 frequency (mhz) power output vs power output v,,=28 v i,,=200 ma 0 0.5 1 1.5 2 2.5 3 power input(w) specifications subject to change without notice. m/a-com, inc. 9-75 north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 m europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf mosfet power transistor, low, 28v lf281 oa v2.00 typical device impedance frequency (mhz) 500 &, (ohms) ( g,,, (ohms) 0.60 - j 9.5 10.0 + j 17.0 ( 1000 1 1.4+j 1.0 1 4.85 + j 7.9 ) 1200 1 1.5+ j 3.5 1 5.7 + j 5.7 i ,i v,,=28 v, i,,=1 00. ma, po,,.=1 0 watts z,, is the series equivalent input impedance of the device from gate to source. z load is the optimum series equivalent load impedance as measured from drain to ground. . . rf test fixture power suppl .y ,015 uf (3 pl> jack (3 pl> connector (2 pl) 7 turns of 18 plwg (2 pl) substrate ,031: er = 2.54 -l 50 uf @ 50 volts ~ r560 pf atc (2 pl> r ,130? \ t-t- j 1,360?- -j .725? rt-l-970?- *1.040? 1 +-- 2.240?- specifications subject to change without notice. 9-76 north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m/a-com, inc. n europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
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